PART |
Description |
Maker |
3SK134B 3SK134B-T1 3SK134B-VM 3SK134B-T2 |
Dual-gate MOS FET RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
BF991 |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
ETC
|
3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
BF992 BF992_3 |
Silicon N-channel dual gate MOS-FET From old datasheet system
|
PHILIPS[Philips Semiconductors]
|
3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4 Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
BF997 |
N-channel dual-gate MOS-FET Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|